Product description
Lam Research 660-095275-005 / Advanced Energy 3150275-007 bias RF match, 4 MHz, 2.5 kW.
Specifications and identifiers
identified attributes
| Function | Bias RF match RF matching network used in bias power delivery. |
|---|
| Frequency | 4 MHz Supported by provided evidence. |
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| Power rating | 2.5 kW Supported by provided evidence. |
|---|
| Associated vendor part | Advanced Energy 3150275-007 Verify exact label and Lam cross-reference. |
|---|
Equipment context
- Lam Research bias RF subsystem
Applications
plasma etchPECVDPVD sputteringwafer-clean or preclean chambersbias RF matchingplasma chamber RF power deliveryLam chamber RF subsystem service
How it works
An RF power subsystem component used to generate, match, or deliver radio-frequency energy to a process chamber.
RF components are highly configuration-dependent; frequency, power rating, connector style, and matching-network compatibility must be verified.
Technical guide
bias_rf_match
A bias RF match tunes the impedance between an RF bias generator and chamber electrode/chuck to reduce reflected power.
- Bias RF
- RF power applied to control ion energy at a wafer or electrode.
- RFPP
- RF power product/platform context; verify exact meaning.
What to verify before purchase
- Frequency and power rating
- Connector/cooling configuration
- Advanced Energy and Lam part-number cross-reference
- Revision and tuning configuration
Confirm with the seller
- Exact Lam chamber platform
Product reference only. Confirm fitment, revision, included components, and specifications before purchase.